John G Ekerdt


John G Ekerdt
Professor and Dick Rothwell Endowed Chair in Chemical Engineering, Department of Chemical Engineering, Cockrell School of Engineering
Associate Dean, Cockrell School of Engineering

Phone: +1 512 471 4689
Email: ekerdt@utexas.edu

Media Rep Contact

Patrick Wiseman
512-232-8060
email

Sandra Zaragoza (primary)
512-471-2129
email

 
 

Research programs explore the chemical vapor deposition growth chemistry of silicon-germanium and compound semiconductor crystalline thin films, silicon and germanium quantum dots on dielectric surfaces, and multimetallic nitride and carbide barrier films. The silicon-germanium alloy studies seek to establish a first principles description of the growth kinetics and address the question of how local structure and surface order versus long range electronic effects alter the thin film growth kinetics. Current attention is focussed on the dynamic state of the growth surface, using surface science probes and nonlinear optical spectroscopy, as a function of Ge concentration, H ad-atoms and dopants. The research on compound semiconductor materials and film growth investigates pathways and sites for organometallic precursor adsorption and ligand removal to provide the film grower with a framework for anticipating likely reactions during growth and the synthetic chemist with a basis for designing specific ligands into a precursor. The quantum dot program investigates nucleation and particle growth kinetics and seeks to develop methods to manipulate the density and size uniformity of the quantum dots Multimetallic barrier film work is developing a metalorganic chemical vapor deposition process for the thin films that have potential for copper diffusion barriers.

Media Rep Contact

Patrick Wiseman
512-232-8060
email

Sandra Zaragoza (primary)
512-471-2129
email